PART |
Description |
Maker |
K6T2008S2A |
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM
|
Samsung Semiconductor
|
CMP0417AA0-F70I CMP0417AA0-I |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
K6F2008T2E |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
EM6320FP32BT-12LL EM6320FP32BT-12S EM6320FP32BT-55 |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
EM6320FP32AW-70L EM6320FP32AW-70LF EM6320FP32AW12L |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
K6F4016U4G |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor]
|
BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
V53C104B V53C104BK70 V53C104BK70L V53C104BK80 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|